Datasheet > 2SB1341

2SB1341

更新时间： 2024-11-23 06:20:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	224K
描述
isc Silicon PNP Darlington Power Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SB1341 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB1341 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1343

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -100V(Min)

·High DC Current Gain-

: h_FE= 1000(Min)@ (V_CE= -3V, I_C= -2A)

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-100

-7

UNIT

Collector Current-Continuous

Collector Current-Peak

-8

I_CM

-10

Collector Power Dissipation

@T_a=25℃

P_C

Collector Power Dissipation

@T_C=25℃

Junction Temperature

Storage Temperature

150

-55~150

℃

T_J

T_stg

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与2SB1341相关器件

型号	品牌	获取价格	描述	数据表
2SB1341C7	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1341C7K	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1341K	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1342	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1342	ROHM	获取价格	Power Transistor (-80V, -4A)
2SB1342	ISC	获取价格	Silicon PNP Power Transistors
2SB1342C7K	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1342K	ROHM	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB1343	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SB1343	ISC	获取价格	isc Silicon PNP Darlington Power Transistor