Datasheet > 2SB1339

2SB1339

更新时间： 2024-11-23 06:26:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	96K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

技术参数
数据手册

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2SB1339 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB1339 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1339

DESCRIPTION

·With TO-220C package

·High DC current gain

·Low saturation voltage

·DARLINGTON

APPLICATIONS

·For low frequency power amplifier and

power driver applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector -emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-120

-6

UNIT

Open emitter

Open base

Open collector

-6

I_CM

Collector current-peak

-10

T_a=25℃

T_C=25℃

P_C

Collector power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3

中文翻译

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