生命周期: | Transferred | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.44 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 10 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 320 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1205_15 | KEXIN |
获取价格 |
PNP Transistors | |
2SB1205R | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-252 | |
2SB1205-R | KEXIN |
获取价格 |
PNP Transistors | |
2SB1205R(TP) | ONSEMI |
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TRANSISTOR,BJT,PNP,20V V(BR)CEO,5A I(C),TO-251VAR | |
2SB1205RTP-FA | ONSEMI |
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Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA, 3 | |
2SB1205S | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-252 | |
2SB1205-S | KEXIN |
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PNP Transistors | |
2SB1205S(TP) | ONSEMI |
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暂无描述 | |
2SB1205S(TP-FA) | ONSEMI |
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TRANSISTOR,BJT,PNP,20V V(BR)CEO,5A I(C),TO-252VAR | |
2SB1205S-E | ONSEMI |
获取价格 |
Strobe High-Current Switching Applications |