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2SB1207S PDF预览

2SB1207S

更新时间: 2024-11-18 21:22:19
品牌 Logo 应用领域
松下 - PANASONIC 放大器晶体管
页数 文件大小 规格书
3页 73K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1, 3 PIN

2SB1207S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.92
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):180
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzBase Number Matches:1

2SB1207S 数据手册

 浏览型号2SB1207S的Datasheet PDF文件第2页浏览型号2SB1207S的Datasheet PDF文件第3页 
Transistors  
2SB1207  
Silicon PNP epitaxial planar type  
For low-voltage output amplification  
Unit: mm  
4.0 0.2  
2.0 0.2  
Features  
Low collector-emitter saturation voltage VCE(sat)  
Optimum for high-density mounting  
Allowing supply with the radial taping  
0.75 max.  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
15  
Unit  
V
+0.20  
0.45  
–0.10  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
+0.20  
0.45  
–0.10  
(2.5) (2.5)  
10  
V
0.7 0.1  
7  
V
1: Emitter  
2: Collector  
3: Base  
Collector current  
IC  
ICP  
PC  
Tj  
0.5  
1  
A
1
2
3
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
A
NS-B1 Package  
300  
mW  
°C  
°C  
150  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
15  
10  
7  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
IC = −10 µA, IE = 0  
IC = −1 mA, IB = 0  
V
IE = −10 µA, IC = 0  
VCB = −10 V, IE = 0  
VCE = −2 V, IC = − 0.5 A  
VCE = −2 V, IC = −1 A  
V
100  
350  
nA  
V
1
2
Forward current transfer ratio *  
hFE1  
hFE2  
130  
60  
*
1
Collector-emitter saturation voltage *  
VCE(sat) IC = − 0.4 A, IB = −8 mA  
VBE(sat) IC = − 0.4 A, IB = −8 mA  
0.16 0.30  
1
Base-emitter saturation voltage *  
0.8  
130  
22  
1.2  
V
Transition frequency  
fT  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
R
S
hFE1  
130 to 220  
180 to 350  
Publication date: March 2003  
SJC00069BED  
1

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