生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.44 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 10 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 320 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1205T-TL-E | ONSEMI |
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Strobe High-Current Switching Applications | |
2SB1205TTP | ONSEMI |
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Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN | |
2SB1207 | PANASONIC |
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Silicon PNP epitaxial planer type(For low-voltage output amplification) | |
2SB1207R | PANASONIC |
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Small Signal Bipolar Transistor, 0.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1, | |
2SB1207S | PANASONIC |
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Small Signal Bipolar Transistor, 0.5A I(C), 10V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1, | |
2SB1208TX | PANASONIC |
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Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1209 | PANASONIC |
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Silicon PNP triple diffusion planer type(For low-frequency amplification) | |
2SB1212 | ROHM |
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1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE | |
2SB1212/N | ROHM |
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Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
2SB1212/NP | ROHM |
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Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, |