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2SB1174

更新时间: 2024-02-11 08:18:01
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
1页 40K
描述
Silicon PNP Epitaxial Planar Type

2SB1174 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):3 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):60
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICONVCEsat-Max:0.5 V
Base Number Matches:1

2SB1174 数据手册

  
SMD Type  
Transistors  
Silicon PNP Epitaxial Planar Type  
2SB1174  
TO-252  
Unit: mm  
Features  
6.50+0.15  
-0.15  
2.30+0.1  
-0.1  
Low collector-emitter saturation voltage VCE(sat).  
Satisfactory linearity of forward current transfer ratio hFE.  
Large collector current IC.  
5.30+0.2  
0.50+0.8  
-0.7  
-0.2  
0.127  
max  
0.80+0.1  
-0.1  
0.60+0.1  
2.3  
4.60+0.15  
-0.1  
1 Base  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
-130  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
-80  
V
-7  
V
-3  
-6  
A
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
ICP  
A
PC  
1.3  
W
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
VCEO  
ICEO  
Testconditons  
Min  
-80  
Typ  
Max  
Unit  
V
Collector-emitter voltage  
Collector-emitter cutoff curent  
Emitter-base cutoff current  
IC = -10 mA, IB = 0  
VCE = -100 V,IB = 0  
VEB = -5 V, IC = 0  
-10  
-50  
260  
ìA  
ìA  
IEBO  
VCE = -2 V, IC = -0.5 A  
VCE = -2 V, IC = -0.1 A  
90  
45  
Forward current transfer ratio  
hFE  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
Turn-on time  
VCE(sat) IC = -2 A, IB = -0.1 A  
VBE(sat) IC = -2 A, IB = -0.1 A  
-0.5  
-1.5  
V
V
fT  
ton  
tstg  
tf  
VCE = -10 V, IC = -0.5 A , f = 10 MHz  
30  
0.3  
1.1  
0.3  
MHz  
ìs  
IC = -0.5 A,IB1 = -50 mA,IB2 = 50 mA,  
VCC = -50 V  
Storage time  
ìs  
Fall time  
ìs  
hFE Classification  
Rank  
hFE  
Q
P
90 180  
130 260  
1
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