Datasheet > 2SB1175

2SB1175

更新时间： 2024-11-17 06:22:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	40K
描述
Silicon PNP Epitaxial Planar Type

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中文翻译

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数据手册

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2SB1175 数据手册

SMD Type

Transistors

Silicon PNP Epitaxial Planar Type

2SB1175

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

Low collector-emitter saturation voltage VCE(sat).

Satisfactory linearity of forward current transfer ratio hFE.

Large collector current IC.

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^C

-130

Collector-emitter voltage

Emitter-base voltage

Collector current

-80

-7

-4

-8

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

1.3

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-80

Typ

Max

Unit

Collector-emitter voltage

Collector-emitter cutoff curent

Emitter-base cutoff current

V^CEO

I^CEO

I^EBO

IC = -10 mA, IB = 0

VCE = -100 V,IB = 0

VEB = -5 V, IC = 0

-10

-50

260

ìA

V^CE= -2 V, IC = -1 A

V^CE= -2 V, IC = -0.1 A

Forward current transfer ratio

h^FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Turn-on time

V^CE(sat)IC = -3 A, IB = -0.15 A

V^BE(sat)IC = -3 A, IB = -0.15 A

-0.5

-1.5

f^T

t^on

t^stg

t^f

VCE = -10 V, IC = -0.5 A , f = 10 MHz

MHz

ìs

0.15

0.8

I^C= -1 A,IB1 = -0.1 A,IB2 = 0.1 A, VCC =

-50 V

Storage time

ìs

Fall time

0.15

ìs

hFE Classification

Rank

h^FE

90 180

130 260

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