Datasheet > 2SB1175_15

2SB1175_15

更新时间： 2024-11-21 01:14:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1247K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1175_15 数据手册

SMD Type

Transistors

PNP Transistors

2SB1175

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

■ Features

2.30

+0.8

-0.7

+0.2

5.30

-0.2

0.50

● Satisfactory linearity of forward current transfer ratio hFE

● Low collector-emitter saturation voltage VCE(sat)

● Large collector current I

0.127

max

Complementary to 2SD1745

●

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector current -Pulse

Collector Power Dissipation

Ta = 25℃

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-130

-80

-7

-4

-8

℃

1.3

150

Junction Temperature

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-130

-80

-7

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -10 mA, I =0

= -100μA， I

CB= -100V , I

EB= -6V , I =0

E=0

C=0

CBO

EBO

E=0

-10

-50

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-3 A, I

=-150mA

-0.5

-1.5

=-3 A, I

^CE= -2V, I

CE= -2V, I

= -100 mA

= -1 A

DC current gain

hFE

260

Turn-ON Time

Storage Time

Fall Time

0.15

0.8

= −1A, IB1 = −100 mA, IB2 = 100 mA

stg

CC = −50 V

0.15

Transition frequency

^CE= -10V, I

C= -500mA,f=10MHz

MHz

■ Classification of hfe(2)

Type

2SB1175-Q

90-180

2SB1175-P

130-260

Range

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12 3

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与2SB1175_15相关器件

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2SB1175TX	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
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