生命周期: | Active | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.72 | Is Samacsys: | N |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | VCEsat-Max: | 1.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1173P | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-221VAR | |
2SB1173Q | PANASONIC |
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Transistor | |
2SB1173R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-221VAR | |
2SB1173TX | PANASONIC |
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1174 | TYSEMI |
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Low collector-emitter saturation voltage VCE(sat). Large collector current IC. | |
2SB1174 | PANASONIC |
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For voltage switching | |
2SB1174 | KEXIN |
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Silicon PNP Epitaxial Planar Type | |
2SB1174_15 | KEXIN |
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PNP Transistors | |
2SB1174P | ETC |
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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-221VAR | |
2SB1174-P | KEXIN |
获取价格 |
PNP Transistors |