2SB1119

更新时间： 2024-09-16 04:25:51

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
1页	64K
描述
Plastic-Encapsulated Transistors

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中文翻译

获取价格

数据手册

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2SB1119 数据手册

Transys

Electronics

I M I T E D

SOT-89 Plastic-Encapsulated Transistors

SOT-89

2SB1119 TRANSISTOR (PNP)

1. ^BASE

FEATURES

Power dissipation

2. ^COLLECTOR

3. ^EMITTER

P_CM

500 mW (Tamb=25℃)

Collector current

I_CM:

-1

Collector current (Pulse)

ICP:

-2

Collector-base voltage

V_(BR)CBO

-25

Operating and storage junction temperature range

T_J,T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-10µA, I_E=0

Ic=-1mA, I_B=0

MIN

-25

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-10µA, I_C=0

µA

V_CB=-20V, I_E=0

-0.1

560

I_EBO

Emitter cut-off current

V_EB=-4V, I_C=0

h_FE(1)

V_CE=-2V, I_C=-50mA

100

DC current gain

h_FE(2)

V_CE=-2V, I_C=-1A

V_CE(sat)

V_BE(SAT)

f_T

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-500mA, I_B=-50mA

V_CE=-10V, I_C=-50mA

-0.7

-1.2

MHz

180

C_ob

Collector output capacitance

V_CB=-10V, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

Marking

100-200

140-280

200-400

280-560

中文翻译

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2SB1119R	TRSYS	获取价格	Transistor
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2SB1119S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 1A I(C) \| SOT-89
2SB1119-S	KEXIN	获取价格	PNP Transistors
2SB1119T	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 1A I(C) \| SOT-89
2SB1119-T	KEXIN	获取价格	PNP Transistors
2SB1119U	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 1A I(C) \| SOT-89
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2SB1120	TYSEMI	获取价格	Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. small-sized hybrid ICS