Datasheet > 2SB1106_2014

2SB1106_2014

更新时间： 2024-11-17 01:20:03

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	161K
描述
Silicon PNP Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1106_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1106

DESCRIPTION

·With TO-220C package

·DARLINGTON

·High DC durrent gain

·Complement to type 2SD1606

APPLICATIONS

·Designed for use in low frequency

power amplifier applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current-DC

Collector power dissipation

Junction temperature

Storage temperature

CONDITIONS

VALUE

-120

-7

UNIT

Open emitter

Open base

Open collector

-6

T_C=25℃

P_C

℃

T_j

150

T_stg

-55~150

12 3

中文翻译

下载PDF

与2SB1106_2014相关器件

型号	品牌	获取价格	描述	数据表
2SB1108	PANASONIC	获取价格	Medium Speed Switching Complementary Pair with 2SD1608
2SB1109	HITACHI	获取价格	SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER)
2SB1109B	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 100MA I(C) \| TO-126
2SB1109C	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 100MA I(C) \| TO-126
2SB1109D	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 100MA I(C) \| TO-126
2SB1110	HITACHI	获取价格	SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER)
2SB1110B	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 100MA I(C) \| TO-126
2SB1110C	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 100MA I(C) \| TO-126
2SB1110D	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 100MA I(C) \| TO-126
2SB1114	NEC	获取价格	PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD