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2SB1114

更新时间: 2024-11-16 12:53:39
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
1页 76K
描述
World standard miniature package. High DC current gain hFE=135 to 600.

2SB1114 数据手册

  
Product specification  
2SB1119  
Features  
Very small size making it easy to provide highdensity,  
small-sized hybrid ICs.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-25  
-25  
V
-5  
V
-1  
-2  
A
Collector current (pulse)  
Collector dissipation  
ICP  
A
PC  
500  
mW  
Jumction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
IEBO  
Testconditons  
Min  
Typ  
Max  
-0.1  
-0.1  
560  
Unit  
ìA  
VCB = -20V , IE = 0  
VCB = -4V , IE = 0  
ìA  
VCE = -2V , IC = -50mA  
VCE = -2V , IC = -1A  
VCE = -10V , IC = -50mA  
100  
40  
DC current Gain  
hFE  
Gain bandwidth product  
fT  
180  
MHz  
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Output capacitance  
VCE(sat) IC = -500mA , IB = -50mA  
VBE(sat) IC = -500mA , IB = -50mA  
V(BR)CBO IC = -10ìA , IE = 0  
-0.15 -0.7  
-0.85 -1.2  
V
-25  
-25  
-5  
V
V(BR)CEO  
V
IC = -1mA , RBE =  
V(BR)EBO IE = -10ìA , IC = 0  
Cob VCB = -10V , f = 1MHz  
V
52  
pF  
hFE Classification  
BB  
Marking  
Rank  
hFE  
R
S
T
U
280 560  
100 200  
140 280  
200 400  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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