Datasheet > 2SB1114-L-H

2SB1114-L-H

更新时间： 2024-11-17 01:08:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1119K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SB1114-L-H 数据手册

SMD Type

Transistors

PNP Transistors

2SB1114-HF

■ Features

1.70 0.1

● High Dc current gain hFE=135 to 600

● Low VCE(sat) V^CE(sat)=-0.3V at 1.5A

● Complementary to 2SD1614-HF

0.42 0.1

0.46 0.1

● Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-20

-6

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector current -Pulse

Collector Power Dissipation

Junction Temperature

-2

-3

℃

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-20

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， I =0

= -100μA， I =0

CB= -16V , I =0

^EB= -6V , I =0

E=0

CBO

EBO

-0.1

-0.5

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-1.5 A, I

B=-50mA

-0.3

=-1.5 A, I

B=-50mA

-1.05 -1.2

-0.65 -0.68 -0.75

^CE= -6V, I

CE= -2V, I

= -100 mA

= -2 A

135

350

600

DC current gain

hFE

Collector output capacitance

Transition frequency

CB = –10V, I

^CE= -10V, I

= 0, f = 1MHz

= 50mA

180

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SB1114-M-HF 2SB1114-L-HF 2SB1114-K-HF

135-270 200-400 300-600

ZM ZL ZK

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