生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.35 | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 80 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 8000 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1093L | RENESAS |
获取价格 |
1500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB1093-L | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1093L-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1093M | RENESAS |
获取价格 |
1500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR | |
2SB1093M | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1093-M | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1093M-AZ | NEC |
获取价格 |
暂无描述 | |
2SB1094 | NEC |
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PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER | |
2SB1094 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SB1094 | ISC |
获取价格 |
Silicon PNP Power Transistors |