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2SB0949P

更新时间： 2024-11-29 20:48:39
品牌 Logo 应用领域
松下 - PANASONIC 局域网开关晶体管
页数 文件大小 规格书
3页 80K
描述
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F-A1, 3 PIN

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2SB0949P 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.84
Is Samacsys：N外壳连接：ISOLATED
最大集电极电流 (IC)：2 A集电极-发射极最大电压：60 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：4000
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：PNP最大功率耗散 (Abs)：35 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：20 MHz
Base Number Matches：1

2SB0949P 数据手册

 浏览型号2SB0949P的Datasheet PDF文件第2页浏览型号2SB0949P的Datasheet PDF文件第3页 
Power Transistors  
2SB0949 (2SB949), 2SB0949A (2SB949A)  
Silicon PNP epitaxial planar type darlington  
Unit: mm  
10.0 0.2  
5.5 0.2  
4.2 0.2  
2.7 0.2  
For power amplification and switching  
Complementary to 2SD1275 and 2SD1275A  
■ Features  
• High forward current transfer ratio hFE  
• High-speed switching  
φ 3.1 0.1  
• Full-pack package which can be installed to the heat sink with one screw  
1.3 0.2  
1.4 0.1  
■ Absolute Maximum Ratings Ta = 25°C  
+0.2  
–0.1  
0.5  
Parameter  
Symbol  
Rating  
Unit  
0.8 0.1  
2SB0949  
2SB0949A  
2SB0949  
2SB0949A  
VCBO  
−60  
V
Collector-base voltage  
(Emitter open)  
2.54 0.3  
5.08 0.5  
−80  
VCEO  
−60  
V
Collector-emitter voltage  
(Base open)  
1: Base  
2: Collector  
3: Emitter  
EIAJ: SC-67  
−80  
1
2 3  
Emitter-base voltage (Collector open) VEBO  
−5  
V
A
TO-220F-A1 Package  
Collector current  
Peak collector current  
Collector power  
IC  
ICP  
PC  
−2  
−4  
A
Internal Connection  
TC = 25°C  
35  
W
C
dissipation  
2
B
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
−55 to +150  
E
■ Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
−60  
−80  
Typ  
Max  
Unit  
2SB0949  
VCEO  
IC = −30 mA, IB = 0  
V
Collector-emitter voltage  
(Base open)  
2SB0949A  
Base-emitter voltage  
VBE  
ICBO  
VCE = −4 V, IC = −2 A  
VCB = −60 V, IE = 0  
VCB = −80 V, IE = 0  
VCE = −30 V, IB = 0  
VCE = −40 V, IB = 0  
VEB = −5 V, IC = 0  
−2.8  
−1  
V
2SB0949  
2SB0949A  
2SB0949  
2SB0949A  
mA  
Collector-base cutoff  
current (Emitter open)  
−1  
ICEO  
−2  
mA  
Collector-emitter cutoff  
current (Base open)  
−2  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
IEBO  
hFE1  
−2  
mA  
VCE = −4 V, IC = −1 A  
VCE = −4 V, IC = −2 A  
1000  
1000  
*
hFE2  
10 000  
Collector-emitter saturation voltage  
Transition frequency  
Turn-on time  
VCE(sat) IC = −2 A, IB = −8 mA  
−2.5  
V
MHz  
µs  
fT  
ton  
tstg  
tf  
VCE = −10 V, IC = − 0.5 A, f = 1 MHz  
20  
0.4  
1.5  
0.5  
IC = −2 A, IB1 = −8 mA, IB2 = 8 mA  
VCC = −50 V  
Storage time  
µs  
Fall time  
µs  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
R
Q
P
hFE2  
1000 to 2500 2000 to 5000 4000 to 10000  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: April 2003  
SJD00028BED  
1
123

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