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2SB0950 PDF预览

2SB0950

更新时间： 2024-11-28 22:06:55
品牌 Logo 应用领域
松下 - PANASONIC 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
3页 76K
描述
For Power Amplification And Switching

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中文翻译

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2SB0950 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：TO-220F-A1, 3 PIN针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.84
外壳连接：ISOLATED最大集电极电流 (IC)：4 A
集电极-发射极最大电压：60 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：1000JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：20 MHz
Base Number Matches：1

2SB0950 数据手册

 浏览型号2SB0950的Datasheet PDF文件第2页浏览型号2SB0950的Datasheet PDF文件第3页 
Power Transistors  
2SB0950 (2SB950), 2SB0950A (2SB950A)  
Silicon PNP epitaxial planar type darlington  
Unit: mm  
For power amplification and switching  
10.0 0.2  
5.5 0.2  
4.2 0.2  
2.7 0.2  
Complementary to 2SD1276 and 2SD1276A  
■ Features  
φ 3.1 0.1  
• High forward current transfer ratio hFE  
• High-speed switching  
• Full-pack package which can be installed to the heat sink with one screw  
1.3 0.2  
■ Absolute Maximum Ratings TC = 25°C  
1.4 0.1  
+0.2  
–0.1  
Parameter  
Symbol  
Rating  
Unit  
0.5  
0.8 0.1  
2SB0950  
2SB0950A  
2SB0950  
2SB0950A  
VCBO  
−60  
V
Collector-base voltage  
(Emitter open)  
−80  
2.54 0.3  
5.08 0.5  
VCEO  
−60  
V
Collector-emitter voltage  
(Base open)  
1: Base  
−80  
2: Collector  
3: Emitter  
EIAJ: SC-67  
1
2 3  
Emitter-base voltage (Collector open) VEBO  
−5  
V
A
TO-220F-A1 Package  
Collector current  
Peak collector current  
Collector power  
IC  
ICP  
PC  
−4  
−8  
A
Internal Connection  
40  
W
C
dissipation  
Ta = 25°C  
2
B
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
−55 to +150  
E
■ Electrical Characteristics TC = 25°C 3°C  
Parameter  
Symbol  
Conditions  
Min  
−60  
−80  
Typ  
Max  
Unit  
2SB0950  
VCEO  
IC = −30 mA, IB = 0  
V
Collector-emitter voltage  
(Base open)  
2SB0950A  
Base-emitter voltage  
VBE  
ICBO  
VCE = −3 V, IC = −3 A  
VCB = −60 V, IE = 0  
VCB = −80 V, IE = 0  
VCE = −30 V, IB = 0  
VCE = −40 V, IB = 0  
VEB = −5 V, IC = 0  
−2.5  
−200  
−200  
−500  
−500  
−2  
V
2SB0950  
2SB0950A  
2SB0950  
2SB0950A  
µA  
Collector-base cutoff  
current (Emitter open)  
ICEO  
µA  
Collector-emitter cutoff  
current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
IEBO  
hFE1  
mA  
VCE = −3 V, IC = − 0.5 A  
VCE = −3 V, IC = −3 A  
1000  
1000  
*
hFE2  
10 000  
−2  
Collector-emitter saturation voltage  
VCE(sat)1 IC = −3 A, IB = −12 mA  
VCE(sat)2 IC = −5 A, IB = −20 mA  
V
V
−4  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCE = −10 V, IC = − 0.5 A, f = 1 MHz  
20  
0.3  
2
MHz  
µs  
IC = −3 A, IB1 = −12 mA, IB2 = 12 mA  
VCC = −50 V  
µs  
0.5  
µs  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
R
Q
P
hFE2  
1000 to 2500 2000 to 5000 4000 to 10000  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: April 2003  
c
1
123

中文翻译

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2SB0950(2SB950) ETC

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 		Power Device - Power Transistors - General-Purpose power amplification
2SB0950|2SB950 ETC

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 		Power Device - Power Transistors - General-Purpose power amplification
2SB0950A PANASONIC

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 		For Power Amplification And Switching
2SB0950A(2SB950A) ETC

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 		Power Device - Power Transistors - General-Purpose power amplification
2SB0950A|2SB950A ETC

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 		Power Device - Power Transistors - General-Purpose power amplification
2SB0950AP ETC

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 		TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB
2SB0950AQ PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0950AR PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0950P PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SB0950Q PANASONIC

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 		Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti

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