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2SB0709A(2SB709A) PDF预览

2SB0709A(2SB709A)

更新时间: 2024-10-27 23:20:03
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 75K
描述
2SB0709A (2SB709A) - PNP Transistor

2SB0709A(2SB709A) 数据手册

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Transistor  
2SB0709A (2SB709A)  
Silicon PNP epitaxial planer type  
For general amplification  
Unit: mm  
Complementary to 2SD0601A (2SD601A)  
2.8 +00..32  
0.65 0.15  
1.5 +00..0255  
0.65 0.15  
Features  
High foward current transfer ratio hFE  
.
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1
2
3
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–45  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
0.1 to 0.3  
0.4 0.2  
–45  
V
–7  
V
–200  
–100  
200  
mA  
mA  
mW  
˚C  
IC  
1:Base  
2:Emitter  
JEDEC:TO–236  
EIAJ:SC–59  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
3:Collector  
Mini Type Package  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
µA  
µA  
V
VCB = –20V, IE = 0  
– 0.1  
–100  
Collector cutoff current  
ICEO  
VCE = –10V, IB = 0  
IC = –10µA, IE = 0  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
–45  
–45  
–7  
IC = –2mA, IB = 0  
V
IE = –10µA, IC = 0  
V
*
Forward current transfer ratio  
hFE  
VCE = –10V, IC = –2mA  
IC = –100mA, IB = –10mA  
160  
460  
Collector to emitter saturation voltage VCE(sat)  
– 0.3  
80  
– 0.5  
V
MHz  
pF  
Transition frequency  
fT  
VCB = –10V, IE = 1mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
Collector output capacitance  
Cob  
2.7  
*1  
h
Rank classification  
FE  
Rank  
hFE  
Q
R
S
160 ~ 260  
BQ  
210 ~ 340  
BR  
290 ~ 460  
BS  
Marking Symbol  
Note.) The Part number in the Parenthesis shows conventional part number.  
1

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