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2SB0710(2SB710) PDF预览

2SB0710(2SB710)

更新时间: 2022-01-19 20:30:00
品牌 Logo 应用领域
其他 - ETC 晶体晶体管信号器
页数 文件大小 规格书
3页 55K
描述
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

2SB0710(2SB710) 数据手册

 浏览型号2SB0710(2SB710)的Datasheet PDF文件第2页浏览型号2SB0710(2SB710)的Datasheet PDF文件第3页 
Transistor  
2SB0710, 2SB0710A (2SB710, 2SB710A)  
Silicon PNP epitaxial planer type  
For general amplification  
Unit: mm  
Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A)  
+0.10  
ñ0.05  
0.40  
3
+0.10  
-0.06  
0.16  
Features  
Large collector current IC.  
Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1
2
(0.95) (0.95)  
1.9±0.1  
+0.20  
Absolute Maximum Ratings (Ta=25˚C)  
2.90  
-0.05  
Parameter  
2SB0710  
Symbol  
Ratings  
–30  
Unit  
10°  
Collector to  
VCBO  
V
base voltage  
Collector to  
2SB0710A  
2SB0710  
2SB0710A  
–60  
–25  
VCEO  
V
emitter voltage  
–50  
Emitter to base voltage  
Peak collector current  
Collector current  
VEBO  
ICP  
IC  
–5  
V
A
–1  
1:Base  
2:Emitter  
3:Collector  
– 0.5  
200  
A
EIAJ:SC–59  
Mini 3-G1 Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
mW  
˚C  
˚C  
Tj  
150  
(2SB0710)  
(2SB0710A)  
Marking symbol : C  
Tstg  
–55 ~ +150  
D
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
VCB = –20V, IE = 0  
–0.1  
µA  
Collector to base  
voltage  
2SB0710  
2SB0710A  
–30  
–60  
–25  
–50  
–5  
VCBO  
IC = –10µA, IE = 0  
V
Collector to emitter 2SB0710  
VCEO  
VEBO  
IC = –10mA, IB = 0  
V
V
voltage  
2SB0710A  
Emitter to base voltage  
IE = –10µA, IC = 0  
*1  
hFE1  
hFE2  
VCE = –10V, IC = –150mA*2  
VCE = –10V, IC = –500mA*2  
IC = –300mA, IB = –30mA*2  
IC = –300mA, IB = –30mA*2  
VCB = –10V, IE = 50mA, f = 200MHz  
VCB = –10V, IE = 0, f = 1MHz  
85  
340  
Forward current transfer ratio  
40  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
– 0.35  
– 0.6  
–1.5  
V
V
–1.1  
200  
6
Transition frequency  
fT  
MHz  
Collector output capacitance  
Cob  
15  
pF  
*2 Pulse measurement  
*1  
h
Rank classification  
FE1  
Rank  
hFE1  
Q
R
S
85 ~ 170  
CQ  
120 ~ 240  
CR  
170 ~ 340  
CS  
2SB0710  
Marking  
Symbol  
Note.) The Part numbers in the Parenthesis show  
conventional part number.  
2SB0710A  
DQ  
DR  
DS  
182  

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