Datasheet > 2SB0745|2SB745

2SB0745|2SB745

更新时间： 2022-01-18 16:09:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管信号器
页数	文件大小	规格书
4页	101K
描述
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

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2SB0745|2SB745 数据手册

Transistors

2SB0745, 2SB0745A (2SB745, 2SB745A)

Silicon PNP epitaxial planar type

For low-frequency and low-noise amplification

Unit: mm

2.5 0.1

6.9 0.1

(1.5)

(1.0)

(1.5)

■ Features

• Low noise voltage NV

• High forward current transfer ratio h_FE

• M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R 0.9

R 0.7

■ Absolute Maximum Ratings T_a= 25°C

(0.85)

0.55 0.1

0.45 0.05

Parameter

Symbol

Rating

−35

Unit

2SB0745

2SB0745A

2SB0745

2SB0745A

V_CBO

Collector-base voltage

(Emitter open)

−55

V_CEO

−35

Collector-emitter voltage

(Base open)

1: Base

(2.5) (2.5)

−55

2: Collector

3: Emitter

M-A1 Package

Emitter-base voltage (Collector open) V_EBO

−5

Collector current

I_C

I_CP

P_C

T_j

−50

°C

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

−200

400

150

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

Conditions

Min

−35

−55

−35

−55

−5

Typ

Max

Unit

2SB0745

2SB0745A

2SB0745

2SB0745A

V_CBO

I_C= −10 µA, I_E= 0

Collector-base voltage

(Emitter open)

V_CEO

I_C= −2 mA, I_B= 0

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open)

Base-emitter voltage

V_EBO

V_BE

I_CBO

I_CEO

h_FE

I_E= −10 µA, I_C= 0

V_CE= −1 V, I_C= −100 mA

V_CB= −10 V, I_E= 0

− 0.7

−1.0

− 0.1

−1

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio ^*

Collector-emitter saturation voltage

Transition frequency

µA



V_CE= −10 V, I_B= 0

V_CE= −5 V, I_C= −2 mA

180

700

V_CE(sat)I_C= −100 mA, I_B= −10 mA

− 0.6

f_T

V_CB= −5 V, I_E= 2 mA, f = 200 MHz

150

MHz

Noise voltage

V_CE= −10 V, I_C= −1 mA, G_V= 80 dB

R_g= 100 kΩ, Function = FLAT

150

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE

180 to 360

260 to 520

360 to 700

Note) The part numbers in the parenthesis show conventional part number.

Publication date: January 2003

SJC00050BED

12 3 4

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