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2SB075040AMLJL

更新时间: 2024-01-23 02:23:45
品牌 Logo 应用领域
士兰微 - SILAN 肖特基二极管
页数 文件大小 规格书
1页 54K
描述
SCHOTTKY BARRIER DIODE CHIPS

2SB075040AMLJL 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 V最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:125 °C
最大输出电流:1 A最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKYBase Number Matches:1

2SB075040AMLJL 数据手册

  
2SB075040AMLJL  
2SB075040AMLJL SCHOTTKY BARRIER DIODE CHIPS  
DESCRIPTION  
Ø
2SB075040AMLJL is a schottky barrier diode  
chips fabricated in silicon epitaxial planar  
technology;  
Ø
Ø
Ø
Ø
Ø
Low power losses, high efficiency;  
Guard ring construction for transient protection;  
High ESD capability;  
High surge capability;  
Chip Topography and Dimensions  
Packaged products are widely used in switching  
power suppliers, polarity protection circuits and  
other electronic circuits.;  
La: Chip Size: 750mm;  
Lb: Pad Size: 655mm;  
Ø
Chip Size:75m0m X 750mm;  
Ø Chip Thickness: 210±20mm;  
ORDERING SPECIFICATIONS  
Product Name  
Specification  
For Au and AlSi wire bonding  
package  
2SB075040AMLJL  
ABSOLUTE MAXIMUM RATINGS  
Parameters  
Symbol  
Ratings  
Unit  
V
Maximum Repetitive Peak Reverse Voltage  
Average Forward Rectified Current  
Peak Forward Surge Current@8.3ms  
Maximum Operation Junction Temperature  
Storage Temperature Range  
V
RRM  
40  
1
I
A
FAV  
I
30  
A
FSM  
T
J
125  
°C  
°C  
T
STG  
•40~125  
ELECTRICAL CHARACTERISTICS (Tamb=25°C)  
Parameters  
Reverse Voltage  
Symbol  
Test Conditions  
Min.  
Max.  
Unit  
mA  
I =100  
R
V
BR  
40  
••  
V
Forward Voltage  
Reverse Current  
V
I =1A  
••  
••  
0.51  
30  
V
F
F
mA  
I
V =40V  
R
R
HANGZHOU SILAN MICROELECTRONICS CO.,LTD  
REV:1.0  
2008.04.01  
Http: www.silan.com.cn  
Page 1 of 1  

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