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2SA733-P PDF预览

2SA733-P

更新时间: 2024-11-26 12:50:11
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管
页数 文件大小 规格书
2页 445K
描述
PNP Silicon Plastic-Encapsulate Transistor

2SA733-P 技术参数

是否Rohs认证: 符合生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.33
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz
Base Number Matches:1

2SA733-P 数据手册

 浏览型号2SA733-P的Datasheet PDF文件第2页 
M C C  
Micro Commercial Components  
2SA733-R  
2SA733-Q  
2SA733-P  
2SA733-K  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
TM  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
Capable of 0.25Watts of Power Dissipation.  
Collector-current 0.1A  
PNP Silicon  
Plastic-Encapsulate  
Transistor  
Collector-base Voltage 60V  
Operating and storage junction temperature range: -55OC to +150OC  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
Compliant. See ordering information)  
TO-92  
A
E
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ Max  
Units  
B
OFF CHARACTERISTICS  
V (BR)CEO  
V (BR)CBO  
V (BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
(I C=1.0mAdc, IB=0)  
50  
60  
5.0  
---  
---  
---  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
Collector-Base Breakdown Voltage  
(I C=5.0uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(I E=50uAdc, IC=0)  
---  
Vdc  
C
Collector Cutoff Current  
(V CB=60Vdc, I =0)  
0.1  
0.1  
uAdc  
uAdc  
E
IEBO  
Emitter Cutoff Current  
(V EB=5.0Vdc, I =0)  
C
ON CHARACTERISTICS  
h FE  
DC Current Gain  
(I =1.0mAdc, VCE=6.0Vdc)  
C
90  
200  
600  
---  
D
V CE(sat)  
Collector-Emitter Saturation Voltage  
(I C=100mAdc, IB=10mAdc)  
---  
0.18  
0.3  
Vdc  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
(I C=10mAdc, VCE=6.0Vdc  
f=30MHz)  
100  
180  
---  
MHz  
E
B
C
G
DIMENSIONS  
INCHES  
MM  
DIM  
A
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
MAX  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
CLASSIFICATION OF HFE (1)  
.190  
.190  
.590  
.020  
.160  
.104  
B
Rank  
R
Q
P
K
C
Range  
90-180  
135-270  
200-400  
300-600  
D
E
G
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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