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2SA733-P-B PDF预览

2SA733-P-B

更新时间: 2024-11-27 05:19:51
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 70K
描述
Transistor

2SA733-P-B 数据手册

 浏览型号2SA733-P-B的Datasheet PDF文件第2页 
2SA733  
M C C  
2SA733-R  
2SA733-Q  
2SA733-P  
2SA733-K  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Capable of 0.25Watts of Power Dissipation.  
PNP Silicon  
Plastic-Encapsulate  
Transistor  
Collector-current 0.1A  
Collector-base Voltage 60V  
Operating and storage junction temperature range: -55OC to +150OC  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
TO-92  
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ Max  
Units  
B
OFF CHARACTERISTICS  
V (BR)CEO  
V (BR)CBO  
V (BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
(I C=1.0mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(I C=5.0uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(I E=50uAdc, IC=0)  
50  
60  
5.0  
---  
---  
---  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
---  
Vdc  
C
Collector Cutoff Current  
0.1  
0.1  
uAdc  
uAdc  
(V CB=60Vdc, I =0)  
E
IEBO  
Emitter Cutoff Current  
(V EB=5.0Vdc, I =0)  
C
ON CHARACTERISTICS  
h FE  
DC Current Gain  
(I =1.0mAdc, VCE=6.0Vdc)  
Collector-Emitter Saturation Voltage  
90  
200  
600  
---  
C
D
V CE(sat)  
(I C=100mAdc, IB=10mAdc)  
---  
0.18  
0.3  
Vdc  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Transistor Frequency  
(I C=10mAdc, VCE=6.0Vdc  
f=30MHz)  
E
C
B
100  
180  
---  
MHz  
G
DIMENSIONS  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
MM  
MIN  
DIM  
A
B
C
D
MAX  
MAX  
NOTE  
CLASSIFICATION OF HFE (1)  
.190  
.190  
.590  
.020  
.160  
.104  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
Rank  
R
Q
P
K
Range  
90-180  
135-270  
200-400  
300-600  
E
G
www.mccsemi.com  
1 of 2  
Revision: 5  
2007/03/01  

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