2SA733-R

更新时间： 2024-11-26 12:50:11

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	445K
描述
PNP Silicon Plastic-Encapsulate Transistor

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中文翻译

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数据手册

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2SA733-R 数据手册

M C C

Micro Commercial Components

2SA733-R

2SA733-Q

2SA733-P

2SA733-K

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

•

Capable of 0.25Watts of Power Dissipation.

Collector-current 0.1A

PNP Silicon

Plastic-Encapsulate

Transistor

Collector-base Voltage 60V

Operating and storage junction temperature range: -55^OC to +150^OC

•

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Lead Free Finish/Rohs Compliant ("P"Suffix designates

Compliant. See ordering information)

TO-92

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Typ Max

Units

OFF CHARACTERISTICS

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I _C=1.0mAdc, I_B=0)

5.0

---

Vdc

Collector-Base Breakdown Voltage

(I _C=5.0uAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I _E=50uAdc, I_C=0)

---

Vdc

Collector Cutoff Current

(V _CB=60Vdc, I =0)

0.1

uAdc

I_EBO

Emitter Cutoff Current

(V _EB=5.0Vdc, I =0)

ON CHARACTERISTICS

h _FE

DC Current Gain

(I =1.0mAdc, V_CE=6.0Vdc)

200

600

---

V _CE(sat)

Collector-Emitter Saturation Voltage

(I _C=100mAdc, I_B=10mAdc)

---

0.18

0.3

Vdc

SMALL-SIGNAL CHARACTERISTICS

f_T

Transistor Frequency

(I _C=10mAdc, V_CE=6.0Vdc

f=30MHz)

100

180

---

MHz

DIMENSIONS

INCHES

DIM

MIN

.170

.550

.010

.130

.010

MAX

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

CLASSIFICATION OF HFE (1)

.190

.590

.020

.160

.104

Rank

Range

90-180

135-270

200-400

300-600

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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