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2SA733T PDF预览

2SA733T

更新时间: 2024-11-26 06:21:15
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 293K
描述
PNP Plastic Encapsulated Transistor

2SA733T 数据手册

 浏览型号2SA733T的Datasheet PDF文件第2页 
2SA733T  
-60 V, -150 mA  
PNP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen and lead free  
FEATURES  
TO-92  
Power dissipation  
G
H
1Emitter  
2Collector  
3Base  
PACKAGE INFORMATION  
Weight: 0.2100g (Approximately)  
J
A
D
B
Collector  
Millimeter  
REF.  
2
Min.  
4.40  
4.30  
12.70  
3.30  
0.36  
0.36  
Max.  
4.70  
4.70  
-
3.81  
0.56  
0.51  
K
A
B
C
D
E
F
3
Base  
E
C
F
G
H
J
1.27 TYP.  
1
Emitter  
1.10  
2.42  
0.36  
-
2.66  
0.76  
K
ABSOLUTE MAXIMUM RATINGS (TA = 25unless otherwise noted)  
Parameter  
Symbol  
VCBO  
Ratings  
-60  
Unit  
Collector to Base Voltage  
V
V
Collector to Emitter Voltage  
Emitter to Base Voltage  
VCEO  
-50  
VEBO  
-5  
V
mA  
Collector Current -Continuous  
Total Power Dissipation  
IC  
-100  
250  
PC  
mW  
Junction, Storage Temperature  
TJ, TSTG  
+150, -55 ~ +150  
ELECTRICAL CHARACTERISTICS (TA = 25unless otherwise specified)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Test Conditions  
BVCBO  
-60  
-
-
IC=-50uA, IE = 0  
IC=-1mA, IB = 0  
IE=-50uA, IC = 0  
VCB=-60V, IE = 0  
VEB=-5V, IC = 0  
BVCEO  
-50  
-
-
V
BVEBO  
-5  
-
-
V
ICBO  
-
-
-100  
-100  
-0.30  
-0.68  
600  
-
nA  
nA  
V
IEBO  
-
-
VCE(sat)  
-
-0.58  
90  
100  
-
-0.18  
IC=-100mA, IB=-10mA  
VBE  
-0.62  
V
VCE = -6V, IC = -1.0mA  
hFE  
200  
VCE=-6V, IC=-1mA  
fT  
-
-
-
MHz  
pF  
VCE=-6V, IC=-10mA  
Cob  
6
VCB = -10V, IE = 0, f = 1 MHz  
VCE=-6V, IC=-0.3mA, Rg=10k, f=100HZ  
NF (noise figures)  
-
20  
dB  
CLASSIFICATION OF hFE  
Rank  
R
Q
P
K
Range  
90 - 180  
135 - 270  
200 - 400  
300 - 600  
01-June-2005 Rev. B  
Page 1 of 2  

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