Datasheet > 2SA733-R-A

2SA733-R-A

更新时间： 2024-11-26 20:47:19

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	70K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SA733-R-A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.88	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

2SA733-R-A 数据手册

2SA733

M C C

2SA733-R

2SA733-Q

2SA733-P

2SA733-K

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Capable of 0.25Watts of Power Dissipation.

PNP Silicon

Plastic-Encapsulate

Transistor

Collector-current 0.1A

Collector-base Voltage 60V

Operating and storage junction temperature range: -55^OC to +150^OC

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

TO-92

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ Max

Units

OFF CHARACTERISTICS

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I _C=1.0mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I _C=5.0uAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I _E=50uAdc, I_C=0)

5.0

---

Vdc

---

Vdc

Collector Cutoff Current

0.1

uAdc

(V _CB=60Vdc, I =0)

I_EBO

Emitter Cutoff Current

(V _EB=5.0Vdc, I =0)

ON CHARACTERISTICS

h _FE

DC Current Gain

(I =1.0mAdc, V_CE=6.0Vdc)

Collector-Emitter Saturation Voltage

200

600

---

V _CE(sat)

(I _C=100mAdc, I_B=10mAdc)

---

0.18

0.3

Vdc

SMALL-SIGNAL CHARACTERISTICS

f_T

Transistor Frequency

(I _C=10mAdc, V_CE=6.0Vdc

f=30MHz)

100

180

---

MHz

DIMENSIONS

INCHES

MIN

.170

.550

.010

.130

.010

MIN

DIM

MAX

NOTE

CLASSIFICATION OF HFE (1)

.190

.590

.020

.160

.104

4.33

4.30

13.97

0.36

3.30

2.44

4.83

14.97

0.56

3.96

2.64

Rank

Range

90-180

135-270

200-400

300-600

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Revision: 5

2007/03/01

中文翻译

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