Datasheet > 2SA2094_11

2SA2094_11

更新时间： 2024-11-09 07:29:51

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	929K
描述
Medium power transistor (-60V, -2A)

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中文翻译

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数据手册

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2SA2094_11 数据手册

Medium power transistor (60V, 2A)

2SA2094

Features

Dimensions (Unit : mm)

1) High speed switching.

(Tf : Typ. : 30ns at IC = 2A)

TSMT3

2.8

1.6



2) Low saturation voltage, typically



(Typ. 200mV at IC = 1A, IB = 0.1A)

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SC5866

(1) Base

(2) Emitter

(3) Collector

0.3 0.6

Each lead has same dimensions

Abbreviated symbol : VP

Applications

Low frequency amplifier

High speed switching

Structure

PNP epitaxial planar silicon transistor

Packaging specifications

Package

Taping

Code

Type

Basic ordering unit (pieces)

3000

2SA2094

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Symbol

Limits

−60

Unit

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

−60

−6

−2

Collector current

∗1

∗2

Pulsed

−4

°C

Power dissipation

500

Junction temperature

150

Tstg

Range of storage temperature

−55 to 150

∗1 Pw=10ms

∗2 Each terminal mounted on a recommended land

www.rohm.com

2011.03 - Rev.A

1/3

12 3 4

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