Datasheet > 2SA2097(TE16L1,NQ)

2SA2097(TE16L1,NQ)

更新时间： 2024-02-10 04:33:22

品牌	Logo	应用领域
东芝 - TOSHIBA		开关晶体管
页数	文件大小	规格书
5页	142K
描述
TRANSISTOR PNP 50V 5A SC-62

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SA2097(TE16L1,NQ) 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	Factory Lead Time：	18 weeks
风险等级：	5.72	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	50 V
配置：	SINGLE	最小直流电流增益 (hFE)：	100
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SA2097(TE16L1,NQ) 数据手册

浏览型号2SA2097(TE16L1,NQ)的Datasheet PDF文件第2页

浏览型号2SA2097(TE16L1,NQ)的Datasheet PDF文件第3页

2SA2097

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2097

High-Speed Swtching Applications

Unit: mm

DC-DC Converter Applications

•

High DC current gain: h

= 200 to 500 (I = −0.5 A)

FE C

Low collector-emitter saturation: V

= −0.27 V (max)

CE (sat)

High-speed switching: t = 55 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

−7

−5

Collector current

Base current

Pulse

−10

−0.5

Ta = 25°C

Tc = 25°C

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

−55 to 150

stg

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-09

12 3 4 5

中文翻译

下载PDF

与2SA2097(TE16L1,NQ)相关器件

型号	品牌	获取价格	描述	数据表
2SA2097(TE16L1,Q)	TOSHIBA	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,5A I(C),TO-252
2SA2097_06	TOSHIBA	获取价格	High-Speed Swtching Applications DC-DC Converter Applications
2SA2098	SANYO	获取价格	High-Current Switching Applications
2SA2098-2SC5887	SANYO	获取价格	High-Current Switching Applications
2SA2099	SANYO	获取价格	High-Current Switching Applications
2SA2099_08	SANYO	获取价格	High-Current Switching Applications
2SA2101	PANASONIC	获取价格	Silicon PNP epitaxial planar type
2SA2102	PANASONIC	获取价格	Silicon PNP epitaxial planar type
2SA2110	PANASONIC	获取价格	Power Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast
2SA2110Q	PANASONIC	获取价格	Power Bipolar Transistor,