2SA2120

更新时间： 2024-01-06 10:27:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体放大器晶体管功率双极晶体管功率放大器局域网
页数	文件大小	规格书
5页	153K
描述
Power Amplifier Applications

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中文翻译

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技术参数
数据手册

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2SA2120 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	最大集电极电流 (IC)：	12 A
配置：	Single	最小直流电流增益 (hFE)：	55
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	200 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SA2120 数据手册

2SA2120

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA2120

Power Amplifier Applications

Unit: mm

•

Complementary to 2SC5948

Recommended for audio frequency amplifier output stage.

Absolute Maximum Ratings (Tc = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−200

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−12

Base current

−1.2

Collector power dissipation

Junction temperature

Storage temperature range

200

°C

150

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-16C1A

Weight: 4.7 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2006-11-16

12 3 4 5

中文翻译

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