2SA2121O(Q)

更新时间： 2024-09-25 13:04:07

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
4页	133K
描述
TRANSISTOR,BJT,PNP,200V V(BR)CEO,15A I(C),TO-264VAR

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技术参数
数据手册

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2SA2121O(Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.61	Is Samacsys：	N
最大集电极电流 (IC)：	15 A	配置：	Single
最小直流电流增益 (hFE)：	80	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	220 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SA2121O(Q) 数据手册

2SA2121

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA2121

Power Amplifier Applications

Unit: mm

Complementary to 2SC5949

Recommended for audio frequency amplifier output stage.

Absolute Maximum Ratings (Tc = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−200

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−15

Base current

−1.5

Collector power dissipation

Junction temperature

Storage temperature range

220

°C

150

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-21F1A

Weight: 9.75 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

2006-11-16

12 3 4

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