Datasheet > 2SA2119PT

2SA2119PT

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
力勤 - CHENMKO		晶体晶体管
页数	文件大小	规格书
3页	98K
描述
Low Ferquency PNP Transistor

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中文翻译

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技术参数
数据手册

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2SA2119PT 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SA2119PT 数据手册

CHENMKO ENTERPRISE CO.,LTD

2SA2119PT

SURFACE MOUNT

Low Ferquency PNP Transistor

VOLTAGE 12 Volts CURRENT 0.5 Ampere

APPLICATION

* For switching,for muting.

FEATURE

SOT-23

* Small surface mounting type. (SOT-23)

* A collector current is large.

* Collector saturation voltage is low.

VCE(sat)<=250mA

At Ic=200mA/IB=10mA

(1)

(2)

CONSTRUCTION

(3)

* PNP Silicon Transistor

(

)

(

)

.055 1.40

.028 0.70

(

)

(

)

.047 1.20

.020 0.50

(

)

.103 2.64

.086 (2.20)

(

)

.045 1.15

CIRCUIT

(

)

.033 0.85

Dimensions in inches and (millimeters)

SOT-23

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

CONDITION

Open Emitter

SYMBOL

VCBO

MIN.

MAX.

UNITS

Volts

Collector - Base Voltage

-15

Collector - Emitter Voltage

Collector Current DC

Open Base

VCEO

-12

Volts

-500

mAmps

-1000

mAmps

ICM

Peak Collector Current

TA ≤ 25^OC; Note 1

PTOT

TSTG

Total Power Dissipation

Storage Temperature

150

^oC

-55

+150

Junction Temperature

+150

^oC

Operating Ambient Temperature

TAMB

-55

Note

1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.

2004-12

12 3

中文翻译

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