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2SA2009GT

更新时间： 2024-11-21 13:01:31

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号双极晶体管光电二极管放大器
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1页	46K
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2SA2009GT 数据手册

Transistors

2SA2009

Silicon PNP epitaxial planer type

Unit: mm

For low-frequency high breakdown voltage amplification

+0.10

+0.1

–0.0

0.15

0.3

–0.05

I Features

• High collector to emitter voltage V_CEO

• Low noise voltage NV

(0.65) (0.65)

1.3 0.1

2.0 0.2

I Absolute Maximum Ratings T_a= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

−120

−5

Unit

10˚

1: Base

2: Emitter

3: Collector

−50

°C

I_C

−20

EIAJ: SC-70

S Mini Type Package (3-pin)

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

Marking Symbol: AR

T_stg

−55 to +150

°C

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

−100

−1

Unit

µA

Collector cutoff current

V_CB= −50 V, I_E= 0

V_CE= −50 V, I_B= 0

I_C= −10 µA, I_E= 0

I_C= −1 mA, I_B= 0

I_CEO

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

h_FE

−120

−5

I_E= −10 µA, I_C= 0

V_CE= −5 V, I_C= −2 mA

I_C= −20 mA, I_B= −2 mA

Forward current transfer ratio ^*

Collector to emitter saturation voltage

Noise voltage

180

700

V_CE(sat)

− 0.6

V_CE= −40 V, I_C= −1 mA, G_V= 80 dB

R_g= 100 kW, Function = FLAT

130

120

Transition frequency

f_T

V_CB= −5 V, I_E= 2 mA, f = 200 MHz

MHz

Note) : Rank classification

Rank

h_FE

180 to 360

260 to 520

360 to 700

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