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2SA2013 PDF预览

2SA2013

更新时间: 2024-11-06 22:35:55
品牌 Logo 应用领域
三洋 - SANYO 晶体转换器晶体管开关
页数 文件大小 规格书
5页 52K
描述
DC/DC Converter Applications

2SA2013 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.43
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):3.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):360 MHzBase Number Matches:1

2SA2013 数据手册

 浏览型号2SA2013的Datasheet PDF文件第2页浏览型号2SA2013的Datasheet PDF文件第3页浏览型号2SA2013的Datasheet PDF文件第4页浏览型号2SA2013的Datasheet PDF文件第5页 
Ordering number:ENN6307A  
PNP/NPN Epitaxial Planar Silicon Transistors  
2SA2013/2SC5566  
DC/DC Converter Applications  
Applications  
Package Dimensions  
unit:mm  
· Relay drivers, lamp drivers, motor drivers, strobes.  
2038A  
Features  
[2SA2013/2SC5566]  
4.5  
1.6  
· Adoption of FBET and MBIT processes.  
· High current capacitance.  
1.5  
· Low collector-to-emitter saturation voltage.  
· High-speed switching.  
· Ultrasmall package facilitates miniaturization in end  
products.  
0.4  
0.5  
· High allowable power dissipation.  
3
2
1
0.4  
1.5  
3.0  
1 : Base  
0.75  
2 : Collector  
3 : Emitter  
Specifications  
( ) : 2SA2013  
SANYO : PCP  
(Bottom view)  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
(–50)80  
Unit  
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
(–)50  
(–)6  
V
V
CEO  
V
EBO  
I
(–)4  
A
C
Collector Current (Pulse)  
Base Current  
I
(–)7  
A
CP  
I
(–)600  
1.3  
mA  
W
W
˚C  
˚C  
B
Mounted on a ceramic board (250mm2×0.8mm)  
Collector Dissipation  
P
C
Tc=25˚C  
3.5  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
typ  
max  
(–)1  
Collector Cutoff Current  
I
V
V
V
=(–)40V, I =0  
E
=(–)4V, I =0  
C
µA  
µA  
CBO  
CB  
EB  
CE  
Emitter Cutoff Current  
DC Current Gain  
I
(–)1  
560  
EBO  
h
=(–)2V, I =(–)500mA  
C
200  
FE  
(360)  
400  
MHz  
MHz  
pF  
Gain-Bandwidth Product  
Output Capacitance  
f
V
=(–)10V, I =(–)500mA  
C
T
CE  
Cob  
V
=(–)10V, f=1MHz  
(24)15  
CB  
Continued on next page.  
Marking : 2SA2013 : AT 2SC5566 : FC  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
52501TS KT TA-3260 No.6307–1/5  

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