Datasheet > 2SA2013Q-HAF

2SA2013Q-HAF

更新时间： 2024-11-22 14:55:47

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	955K
描述
功率三极管

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数据手册

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2SA2013Q-HAF 数据手册

2SA2013Q-HAF

PNP Silicon Epitaxial Planar Power Transistor

Features

• Low Saturation Voltage

• Halogen and Antimony Free(HAF), RoHS compliant

Appilications

• Motor Driving

• Line Switching

1.Base 2.Collector 3.Emitter 4.Collector

SOT-223 Plastic Package

• High Side Switches

• Subscriber Line Interface Cards (SLIC)

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

140

100

Peak Collector Current, Pulsed

Power Dissipation ¹⁾

-I_CM

P_D

1.6

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

Unit

Thermal Resistance from Junction to Ambient ¹⁾

Thermal Resistance-Junction to Case ²⁾

13.8

R_θJC

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

²⁾Thermal resistance from junction to top of the case.

Dated: 24/02/2023 Rev:02

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