生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 12 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 160 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 35 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
最大关闭时间(toff): | 1800 ns | 最大开启时间(吨): | 300 ns |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1870TR/DE | ROHM |
获取价格 |
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SA1870TR/DF | ROHM |
获取价格 |
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SA1870TR/E | ROHM |
获取价格 |
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SA1870TR/EF | ROHM |
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Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SA1871 | NEC |
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PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING | |
2SA1871_15 | KEXIN |
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PNP Transistors | |
2SA1871-A1 | KEXIN |
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PNP Transistors | |
2SA1871-A1-HF | KEXIN |
获取价格 |
PNP Transistors | |
2SA1871-A2 | KEXIN |
获取价格 |
PNP Transistors | |
2SA1871-A2-HF | KEXIN |
获取价格 |
PNP Transistors |