SMD Type
Transistors
PNP Transistors
2SA1871
1.70 0.1
■ Features
● High voltage
● Fast switching speed
● Complementary transistor with 2SC4942
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
-600
-600
-7
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
I
C
-1
A
I
CP
-2
P
C
2
W
℃
T
J
150
Storage Temperature range
Note.1: PW ≤ 10ms,Duty Cycle ≤ 5℅
■ Electrical Characteristics Ta = 25℃
Parameter
T
stg
-55 to 150
Symbol
Test Conditions
Min
-600
-600
-7
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
V
V
V
CBO
CEO
EBO
Ic= -100 μA, I
Ic= -1 mA, I =0
= -100μA, I =0
CB= -600 V , I =0
EB= -7V , I =0
E=0
B
I
E
C
I
CBO
EBO
V
V
E
-10
-10
-1
uA
V
Emitter cut-off current
I
C
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
V
CE(sat)
BE(sat)
I
I
C
=-300 mA, I
B
=-60mA
=-60mA
-0.3
V
C=-300 mA, I
B
-0.85 -1.2
h
FE(1)
V
V
CE= -5V, I
CE=- 5V, I
C
= -100mA
= -500mA
30
5
60
20
120
DC current gain
(Note.1)
hFE(2)
C
Turn-on time
Storage time
Turn -off time
t
on
stg
off
0.1
3.5
0.1
40
0.5
5
V
CC=-250V,I
C
=-0.5A,
us
t
I
B1=-IB2=-0.1A,R
L
=500Ω
t
0.5
Collector output capacitance
C
ob
T
V
V
CB= -10V, I
CE= -10V, I
E
= 0,f=1MHz
= 50mA
pF
Transition frequency
f
E
30
MHz
Note.1 : Pulsed:PW ≤ 350us,Duty Cycle ≤ 2℅
■ Classification of hfe(1)
Type
Range
Marking
2SA1871-A1
2SA1871-A2 2SA1871-A3
30-60
40-80
GA2
60-120
GA3
GA1
1
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