5秒后页面跳转
2SA1797-A-TN3-T PDF预览

2SA1797-A-TN3-T

更新时间: 2024-01-04 20:55:43
品牌 Logo 应用领域
友顺 - UTC 晶体管
页数 文件大小 规格书
4页 163K
描述
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, TO-252, 3 PIN

2SA1797-A-TN3-T 技术参数

生命周期:Active零件包装代码:TO-252
包装说明:TO-252, 3 PIN针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.06
最大集电极电流 (IC):2 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SA1797-A-TN3-T 数据手册

 浏览型号2SA1797-A-TN3-T的Datasheet PDF文件第1页浏览型号2SA1797-A-TN3-T的Datasheet PDF文件第3页浏览型号2SA1797-A-TN3-T的Datasheet PDF文件第4页 
2SA1797  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)  
PARAMETER  
SYMBOL  
VCBO  
RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
VCEO  
-50  
V
VEBO  
-6  
V
DC  
-2  
A
Collector Current  
IC  
PULSE(Note 1)  
TO-92NL  
SOT-223  
SOT-89  
-5  
A
1
0.8  
W
W
W
W
°C  
°C  
Collector Power Dissipation  
PC  
0.5  
TO-252  
1.9  
Junction Temperature  
TJ  
150  
Storage Temperature  
TSTG  
-55 ~ +150  
Note: 1. Single pulse, PW=10ms  
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
BVCBO IC = -50μA  
BVCEO IC = -1mA  
BVEBO IE = -50μA  
-50  
-50  
-6  
V
V
V
ICBO  
IEBO  
VCB = -50V  
VEB = -5V  
-0.1  
-0.1  
μA  
μA  
V
Emitter Cutoff Current  
Collector-Emitter Saturation Voltage  
DC Current Gain  
VCE(SAT) IC/IB = -1A/-50mA (Note)  
-0.15 -0.35  
400  
hFE  
fT  
VCE = -2V, IC=-0.5A (Note)  
VCE = -2V, IE=0.5A, f=100MHz  
VCB = -10V, IE=0A, f=1MHz  
120  
Transition Frequency  
200  
MHz  
pF  
Output Capacitance  
Cob  
36  
Note: Measured using pulse current.  
„
CLASSIFICATION OF hFE  
RANK  
A
B
RANGE  
120-240  
200-400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R208-029,E  
www.unisonic.com.tw  

与2SA1797-A-TN3-T相关器件

型号 品牌 获取价格 描述 数据表
2SA1797B ROHM

获取价格

Transistor
2SA1797-B-AA3-R UTC

获取价格

Transistor
2SA1797-B-T9N-B UTC

获取价格

Transistor
2SA1797-B-T9N-K UTC

获取价格

Transistor
2SA1797-B-T9N-R UTC

获取价格

Transistor
2SA1797-B-TN3-R UTC

获取价格

Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/
2SA1797G-A-T9N-B UTC

获取价格

Small Signal Bipolar Transistor
2SA1797G-A-T9N-K UTC

获取价格

Small Signal Bipolar Transistor
2SA1797G-X-AA3-R UTC

获取价格

POWER TRANSISTOR
2SA1797G-X-AB3-R UTC

获取价格

POWER TRANSISTOR