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2SA1648L PDF预览

2SA1648L

更新时间: 2024-09-14 23:19:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
6页 148K
描述
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-251AA

2SA1648L 数据手册

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DATA SHEET  
SILICON POWER TRANSISTOR  
2SA1648, 2SA1648-Z  
PNP SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-SPEED SWITCHING  
The 2SA1648 is a mold power transistor developed for high-  
PACKAGE DRAWING (UNIT: mm)  
speed switching and features a very low collector-to-emitter  
saturation voltage.  
This transistor is ideal for use in switching regulators, DC/DC  
converters, motor drivers, solenoid drivers, and other low-voltage  
power supply devices, as well as for high-current switching.  
FEATURES  
• Available for high-current control in small dimension  
• Z type is a lead processed product and is deal for mounting a  
hybrid IC.  
• Mold package that does not require an insulating board or  
insulation bushing  
• Low collector saturation voltage:  
VCE(sat) = 0.3 V MAX. (@IC = 3 A)  
• Fast switching speed:  
tf = 0.3 µs MAX. (@IC = 3 A)  
• High DC current gain and excellent linearity  
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)  
Parameter  
Symbol  
Ratings  
100  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
VCBO  
60  
VCEO  
V
7.0  
VEBO  
IC(DC)  
V
Electrode Connection  
1. Base  
2. Collector  
5.0  
A
10  
IC(pulse)*  
A
3. Emitter  
2.5  
IB(DC)  
A
PT (Tc = 25 °C)  
PT (Ta = 25 °C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
18  
W
W
°C  
°C  
1.0**, 2.0***  
150  
55 to +150  
Tstg  
*: PW 300 µs, duty cycle 10%  
**: Printing board mounted  
***: 7.5 mm2 × 0.7 mm ceramic board mounted  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16121EJ1V0DS00 (1st edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-251AA