DATA SHEET
SILICON POWER TRANSISTOR
2SA1648, 2SA1648-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1648 is a mold power transistor developed for high-
PACKAGE DRAWING (UNIT: mm)
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
VCE(sat) = −0.3 V MAX. (@IC = −3 A)
• Fast switching speed:
tf = 0.3 µs MAX. (@IC = −3 A)
• High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Parameter
Symbol
Ratings
−100
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
VCBO
−60
VCEO
V
−7.0
VEBO
IC(DC)
V
Electrode Connection
1. Base
2. Collector
−5.0
A
−10
IC(pulse)*
A
3. Emitter
−2.5
IB(DC)
A
PT (Tc = 25 °C)
PT (Ta = 25 °C)
Tj
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
18
W
W
°C
°C
1.0**, 2.0***
150
−55 to +150
Tstg
*: PW ≤ 300 µs, duty cycle ≤ 10%
**: Printing board mounted
***: 7.5 mm2 × 0.7 mm ceramic board mounted
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16121EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©