是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252AA | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 150 |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 18 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 90 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1648-ZM | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-252AA | |
2SA1648-Z-T1 | RENESAS |
获取价格 |
2SA1648-Z-T1 | |
2SA1648-Z-T2 | RENESAS |
获取价格 |
2SA1648-Z-T2 | |
2SA1649 | NEC |
获取价格 |
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING | |
2SA1649 | RENESAS |
获取价格 |
10000mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA, MP-3, 3 PIN | |
2SA1649(0)-Z-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,30V V(BR)CEO,10A I(C),TO-252 | |
2SA1649(0)-ZK-E1-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,30V V(BR)CEO,10A I(C),TO-252 | |
2SA1649-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MP-3, | |
2SA1649K | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 10A I(C) | TO-251VAR | |
2SA1649-K | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MP-3, |