2SA1648-Z-AZ

更新时间： 2024-09-16 12:57:55

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管
页数	文件大小	规格书
5页	156K
描述
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3Z, 3 PIN

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2SA1648-Z-AZ 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.19
最大集电极电流 (IC)：	5 A	集电极-发射极最大电压：	60 V
配置：	SINGLE	最小直流电流增益 (hFE)：	60
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	90 MHz
Base Number Matches：	1

2SA1648-Z-AZ 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SA1648,1648-Z

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

The 2SA1648 is a mold power transistor developed for high-

PACKAGE DRAWINGS (Unit: mm)

speed switching and features a very low collector-to-emitter

saturation voltage.

2.3 0.2

0.5 0.1

6.5 0.2

5.0 0.2

This transistor is ideal for use in switching regulators, DC/DC

converters, motor drivers, solenoid drivers, and other low-voltage

power supply devices, as well as for high-current switching.

FEATURES

• Available for high-current control in small dimension

• Z type is a lead processed product and is deal for mounting a

hybrid IC.

1.1 0.2

• Mold package that does not require an insulating board or

insulation bushing

0.5 ⁺−0⁰.^.1²

0.5 ⁺−⁰0^..²1

2.3 2.3

• Low collector saturation voltage:

V^CE(sat)1= −0.3 V MAX. (IC = −3.0 A)

• Fast switching speed:

t^f= 0.3 µs MAX. (IC = −3.0 A)

• High DC current gain and excellent linearity

TO-251 (MP-3)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

6.5 0.2

5.0 0.2

2.3 0.2

0.5 0.1

Parameter

Symbol

VCBO

Ratings

−100

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

VCEO

−60

VEBO

−7.0

0.9

0.8

MAX. MAX.

1.1 0.2

IC(DC)

−5.0

2.3 2.3

0.8

Note 1

Collector current (pulse)

Base current (DC)

IC(pulse)

IB(DC)

−10

−2.5

TO-252 (MP3Z)

Total power dissipation (Tc = 25°C)

Total power dissipation (Ta = 25°C)

Junction temperature

°C

ELECTRODE CONNECTION

1.0^{Note 2}, 2.0^{Note 3}

1. Base

2. Collector

3. Emitter

150

Storage temperature

Tstg

−55 to +150

4. Collector (Fin)

Notes 1. PW ≤ 300 µs, Duty Cycle ≤ 10%

2. Printing board mounted

3. 7.5 mm²× 0.7 mm ceramic board mounted

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16121EJ3V0DS00 (3rd edition)

Date Published August 2004 NS CP(K)

Printed in Japan

The mark shows major revised points.

2002

12 3 4 5

中文翻译

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与2SA1648-Z-AZ相关器件

型号	品牌	获取价格	描述	数据表
2SA1648-Z-E1	RENESAS	获取价格	2SA1648-Z-E1
2SA1648-ZK	RENESAS	获取价格	5A, 60V, PNP, Si, POWER TRANSISTOR, TO-252AA, MP-3Z, TO-252, 3 PIN
2SA1648-ZL	RENESAS	获取价格	5A, 60V, PNP, Si, POWER TRANSISTOR, TO-252AA, MP-3Z, TO-252, 3 PIN
2SA1648-ZM	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-252AA
2SA1648-Z-T1	RENESAS	获取价格	2SA1648-Z-T1
2SA1648-Z-T2	RENESAS	获取价格	2SA1648-Z-T2
2SA1649	NEC	获取价格	PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1649	RENESAS	获取价格	10000mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA, MP-3, 3 PIN
2SA1649(0)-Z-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,30V V(BR)CEO,10A I(C),TO-252
2SA1649(0)-ZK-E1-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,30V V(BR)CEO,10A I(C),TO-252

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