2SA1649K

更新时间： 2024-11-10 23:19:59

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
6页	144K
描述
TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 10A I(C) \| TO-251VAR

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中文翻译

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2SA1649K 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SA1649, 2SA1649-Z

PNP SILICON EPITAXIAL POWER TRANSISTOR

FOR HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SA1649 is a mold power transistor developed for high-

speed switching and features a very low collector-to-emitter

saturation voltage.

This transistor is ideal for use in switching regulators, DC/DC

converters, motor drivers, solenoid drivers, and other low-voltage

power supply devices, as well as for high-current switching.

FEATURES

• Available for high-current control in small dimension

• Z type is a lead processed product and is deal for mounting a

hybrid IC.

• Mold package that does not require an insulating board or

insulation bushing

• Low collector saturation voltage:

V^CE(sat)= −0.3 V MAX. (@I^C= −3 A)

• Fast switching speed:

t^f= 0.3 µs MAX. (@I^C= −3 A)

• High DC current amplifiers and excellent linearity

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

Ratings

−40

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

V^CBO

−30

V^CEO

−7.0

V^EBO

I^C(DC)

−10

−20

I^C(pulse)*

ꢀꢁꢂꢃꢄꢅꢆꢇꢂꢈꢉꢆꢊꢊꢂꢃꢄꢋꢆꢊ

ꢌꢍꢈꢎꢏꢐꢂ

ꢑꢍꢈꢉꢆꢁꢁꢂꢃꢄꢆꢅ

ꢒꢍꢈꢀꢓꢋꢄꢄꢂꢅ

ꢔꢍꢈꢕꢋꢊꢈꢖꢃꢆꢁꢁꢂꢃꢄꢆꢅꢗ

−3.5

I^B(DC)

P^T(Tc = 25 °C)

P^T(Ta = 25 °C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

1.0**, 2.0***

150

−55 to +150

T^stg

*: PW ≤ 300 µs, duty cycle ≤ 10%

**: Printing board mounted

***: 7.5 mm²× 0.7 mm ceramic board mounted

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15588EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

12 3 4 5 6

中文翻译

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与2SA1649K相关器件

型号	品牌	获取价格	描述	数据表
2SA1649-K	NEC	获取价格	Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MP-3,
2SA1649K(0)-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,30V V(BR)CEO,10A I(C),TO-251
2SA1649L	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 10A I(C) \| TO-251VAR
2SA1649-L	NEC	获取价格	Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MP-3,
2SA1649L(0)-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,30V V(BR)CEO,10A I(C),TO-251
2SA1649M	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 10A I(C) \| TO-251VAR
2SA1649M-AZ	RENESAS	获取价格	TRANSISTOR,BJT,PNP,30V V(BR)CEO,10A I(C),TO-251
2SA1649-Z	NEC	获取价格	PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
2SA1649-Z-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MP-3Z,
2SA1649-Z-E1	RENESAS	获取价格	2SA1649-Z-E1

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