是否Rohs认证: | 不符合 | 生命周期: | Not Recommended |
零件包装代码: | TO-251AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.33 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JEDEC-95代码: | TO-251AA | JESD-30 代码: | R-PSIP-T3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 225 |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 120 MHz | 最大关闭时间(toff): | 1800 ns |
最大开启时间(吨): | 300 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1649(0)-Z-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,30V V(BR)CEO,10A I(C),TO-252 | |
2SA1649(0)-ZK-E1-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,30V V(BR)CEO,10A I(C),TO-252 | |
2SA1649-AZ | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MP-3, | |
2SA1649K | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 10A I(C) | TO-251VAR | |
2SA1649-K | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MP-3, | |
2SA1649K(0)-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,30V V(BR)CEO,10A I(C),TO-251 | |
2SA1649L | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 10A I(C) | TO-251VAR | |
2SA1649-L | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MP-3, | |
2SA1649L(0)-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,30V V(BR)CEO,10A I(C),TO-251 | |
2SA1649M | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 10A I(C) | TO-251VAR |