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2SA1586

更新时间: 2024-11-05 07:07:59
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
页数 文件大小 规格书
1页 281K
描述
TRANSISTOR(PNP)

2SA1586 数据手册

  
2SA1586  
TRANSISTOR(PNP)  
FEATURES  
SOT323  
High DC Current Gain  
High Voltage and High Current.  
Complementary to 2SC4116  
Small Package  
APPLICATIONS  
General Purpose Amplification.  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
-50  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
V
-5  
Collector Current  
-150  
100  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
PC  
RΘJA  
Tj  
1250  
150  
Storage Temperature  
Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
-50  
-50  
-5  
Typ  
Max  
Unit  
V
V(BR)CBO IC=-100µA, IE=0  
V(BR)CEO IC=-1mA, IB=0  
V(BR)EBO IE=-100µA, IC=0  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
ICBO  
IEBO  
hFE  
VCB=-50V, IE=0  
VEB=-5V, IC=0  
-100  
-100  
400  
nA  
nA  
Emitter cut-off current  
VCE=-6V, IC=-2mA  
70  
80  
DC current gain  
VCE(sat)  
fT  
IC=-100mA, IB=-10mA  
VCE=-10V,Ic=-1mA  
-0.3  
V
Collector-emitter saturation voltage  
Transition frequency  
MHz  
pF  
Cob  
VCB=-10V, IE=0, f=1MHz  
7
Collector output capacitance  
CLASSIFICATION OF hFE  
RANK  
O
Y
120240  
SY  
GR(G)  
RANGE  
70140  
SO  
200400  
MARKING  
SG  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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