生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.65 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.15 A |
基于收集器的最大容量: | 7 pF | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 0.1 W | 最大功率耗散 (Abs): | 0.1 W |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1586W | BL Galaxy Electrical |
获取价格 |
PNP Silicon Epitaxial Planar Transistor | |
2SA1586Y | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-323 | |
2SA1586-Y | KEXIN |
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PNP Transistors | |
2SA1586-Y(5LASTI,F | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1586-Y(T5L,PP,F | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1586-Y(T5LALPSF | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1586-Y(T5LFT) | TOSHIBA |
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Small Signal Bipolar Transistor | |
2SA1586-Y(T5LHND,F | TOSHIBA |
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1586-Y(T5LKEH,F | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
2SA1586-Y(T5LMAA,F | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon |