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2SA1586-Y(T5LALPSF PDF预览

2SA1586-Y(T5LALPSF

更新时间： 2024-11-19 14:39:23
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
3页 281K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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2SA1586-Y(T5LALPSF 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknown风险等级：5.66
Is Samacsys：N其他特性：LOW NOISE
最大集电极电流 (IC)：0.15 A集电极-发射极最大电压：50 V
配置：SINGLE最小直流电流增益 (hFE)：120
JESD-30 代码：R-PDSO-G3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP参考标准：AEC-Q101
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：80 MHz
Base Number Matches：1

2SA1586-Y(T5LALPSF 数据手册

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2SA1586  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1586  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
•
•
•
AEC-Q101 Qualified (Note1)  
High voltage and high current: V  
= −50 V, I = −150 mA (max)  
C
CEO  
Excellent h  
FE  
linearity: h  
(I = −0.1 mA)/ h (I = −2 mA)  
FE C  
FE  
= 0.95 (typ.)  
= 70 to 400  
C
•
•
•
•
High h : h  
FE FE  
Low noise: NF = 1dB (typ.), 10dB (max)  
Complementary to 2SC4116  
Small package  
Note1: For detail information, please contact to our sales.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−50  
−50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
−5  
V
I
−150  
−30  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
JEDEC  
JEITA  
―
T
125  
j
T
−55 to 125  
SC-70  
2-2E1A  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
Weight: 0.006 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
―
―
―
―
−0.1  
−0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= −5 V, I = 0  
C
EBO  
h
FE  
DC current gain  
V
= −6 V, I = −2 mA  
70  
―
400  
CE  
C
(Note)  
Collector-emitter saturation voltage  
Transition frequency  
V
I
= −100 mA, I = −10 mA  
―
80  
―
−0.1  
―
−0.3  
―
V
CE (sat)  
C
B
f
V
V
V
= −10 V, I = −1 mA  
MHz  
pF  
T
CE  
CB  
CE  
C
Collector output capacitance  
C
ob  
= −10 V, I = 0, f = 1 MHz  
4
7
E
= −6 V, I = −0.1 mA, f = 1 kHz,  
C
Noise figure  
NF  
―
1.0  
10  
dB  
Rg = 10 kΩ  
Note: h classification O (O) : 70 to 140, Y (Y) : 120 to 240, GR (G) : 200 to 400  
FE  
(
) marking symbol  
Marking  
Start of commercial production  
1987-01  
1
2015-01-09  
123

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