AEC-Q101 Qualified
Medium Power Transistor (-32V, -05A)
2SA1577FRA
Features
Dimensions (Unit : mm)
1) Large IC.
2SA1577FRA
2SA1577
I
CMAX. = -500mA
2) Low VCE(sat). Ideal for low-voltage operation.
3) Complements the 22SSCC44009977F.RA
2.0 0.2
1.3 0.1
0.9 0.1
0.65 0.65
0.7 0.1
0.2
(1)
(2)
Structure
∼
0
0.1
Epitaxial planer type
PNP silicon transistor
(3)
+
−
0.1
0.3
0.15 0.05
0
All terminals have
same dimensions
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Limits
−40
Unit
V
Abbreviated symbol: H
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
−32
V
Denotes hFE
∗
−5
V
∗
−0.5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
0.2
W
°C
°C
Tj
150
Tstg
−55 to +150
∗
PC MAX. must not be exceeded.
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
−
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IC= −100μA
IC= −1mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
−40
−32
−5
−
−
−
V
V
−
IE= −100μA
VCB= −20V
VEB= −4V
−
−
V
−
−1
−1
−0.6
390
−
μA
μA
V
IEBO
−
Rmitter cutoff current
−
−
IC/IB= −300mA/−30mA
Collector-emitter saturation voltage
DC current transfer ratio
V
CE(sat)
hFE
fT
−
120
−
V
CE= −3V, IC= −100mA
−
−
V
CE= −5V, IE=20mA, f=100MHz
Transition frequency
200
7
MHz
pF
VCB= −10V, IE=0A, f=1MHz
Output capacitance
Cob
−
−
Packaging specifications
Package
Code
Taping
T106
hFE Basic ordering unit (pieces)
QR
3000
Type
2SA1577
2SA1577FRA
hFE values are classifies as follows.
Item
Q
R
hFE
120 to 270 180 to 390
www.rohm.com
2009.12 - Rev.B
1/2
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