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2SA1577-P-TP PDF预览

2SA1577-P-TP

更新时间: 2024-11-21 13:04:07
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 195K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-3

2SA1577-P-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.63
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):82
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SA1577-P-TP 数据手册

 浏览型号2SA1577-P-TP的Datasheet PDF文件第2页 
M C C  
2SA1577-P  
2SA1577-Q  
2SA1577-R  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Ideally Suited for Automatic Insertion  
PNP  
xꢀ  
xꢀ  
xꢀ  
·
Untral Small Surface Mount Package  
Pb-Free Package are Vailable  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Gneral Purpose  
Transistors  
·
Maximum Ratings @ Ta = 25?(unless otherwise noted)  
Symbol  
IC  
Parameter  
Value  
-0.5  
Unit  
A
SOT-323  
A
Collector Current  
D
PD  
Total Device Dissipation  
Junction Temperature  
0.2  
W
C
R
TJ  
150  
C
B
R
TSTG  
Storage Temperature Range  
-55 to +150  
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
F
E
Symbol  
Parameter  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(IC=-1mAdc,IB=0)  
Collector-Base Breakdown Voltage  
(IC=-100uAdc,IE=0)  
Collector-Base Breakdown Voltage  
(IE=-100uAdc,IC=0)  
Collector-Base Cutoff Current  
(VCB=-20Vdc, IE=0)  
V(BR)CEO  
-32  
-40  
-5.0  
V
V
H
G
J
V(BR)CBO  
K
V
V(BR)EBO  
ICBO  
DIMENSIONS  
INCHES  
-1  
-1  
µAdc  
uAdc  
MM  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
.026 Nominal  
.047  
.012  
.000  
.035  
.004  
.012  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
MAX  
NOTE  
Emitter-Base Cutoff Current  
(VEB=4.0Vdc, IC=0)  
IEBO  
2.20  
1.35  
2.20  
ON CHARACTERISTICS  
0.65Nominal  
1.20  
DC Current Gain  
82  
390  
-0.4  
h
FE  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
(IC=-10mAdc, VCE=-3.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-0.1Adc, IB=-0.01Adc)  
Transition Frequency  
(VCE=-5Vdc,IC=-20mAdc,f=100MHZ)  
Collector Output Capacitance  
(VCB=-10Vdc,IE=0,f=1MHZ)  
F
.30  
.000  
.90  
.100  
.30  
G
H
J
VCE(sat)  
Vdc  
MHZ  
PF  
200(typ)  
7(typ)  
f
T
K
Suggested Solder  
Pad Layout  
0.70  
Cob  
CLASSIFICATION OF hFE  
Rank  
P
Q
R
Range  
82-180  
HP  
120-270  
HQ  
180-390  
HR  
0.90  
Marking  
mm  
1.90  
0.65  
0.65  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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