Datasheet > 2SA1577R(SOT-323)

2SA1577R(SOT-323)

更新时间： 2024-11-21 14:46:19

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江苏长电/长晶 - CJ		/
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2SA1577R(SOT-323) 技术参数

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2SA1577R(SOT-323) 数据手册

浏览型号2SA1577R(SOT-323)的Datasheet PDF文件第2页

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

SOT-323

2SA1577 TRANSISTOR (PNP)

FEATURES

Large I_C. _CMax.=-500mA

Low V_CE(sat).Ideal for low-voltage operation.

Complements the 2SC4097.

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-40

Unit

-32

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-500

200

℃

P_C

T_J

150

T_stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

-40

-32

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-100μA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=-20V,I_E=0

-1

μA

Emitter cut-off current

V_EB=-4V,I_C=0

DC current gain

V_CE=-3V,I_C=-10mA

390

-0.4

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C= -100mA, I_B=-10mA

V_CE=-5V, I_C=-20mA ,f =100MHz

V_CB=-10V,I_E=0,f=1MHz

200

MHz

Collector Output Capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

82-180

120-270

180-390

Range

MARKING

A,May,2011

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