Datasheet > 2SA1512R

2SA1512R

更新时间： 2024-11-24 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	49K
描述
TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 500MA I(C) \| SPAK

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中文翻译

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数据手册

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2SA1512R 数据手册

Transistor

2SA1512

Silicon PNP epitaxial planer type

For low-frequency output amplification

Complementary to 2SC1788

Unit: mm

4.0±0.2

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

Optimum for low-voltage operation and for converters.

Allowing supply with the radial taping.

Optimum for high-density mounting.

marking

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–25

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–20

1.27 1.27

–7

2.54±0.15

–1

1:Emitter

2:Collector

3:Base

I_C

– 0.5

300

EIAJ:SC–72

New S Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

–1

Unit

µA

V_CB= –25V, I_E= 0

V_CE= –20V, I_B= 0

_C= –10µA, I_E= 0

Collector cutoff current

I_CEO

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

–25

–20

–7

I_C= –1mA, I_B= 0

I_E= –10µA, I_C= 0

h_FE1

h_FE2

V_CE= –2V, I_C= –0.5A^*2

V_CE= –2V, I_C= –1A^*2

I_C= –500mA, I_B= –50mA^*2

220

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

– 0.4

–1.2

Transition frequency

f_T

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

150

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

90 ~ 155

130 ~ 220

12 3

中文翻译

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