Datasheet > 2SA1514K-R

2SA1514K-R

更新时间： 2024-11-03 01:14:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1083K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1514K-R 数据手册

SMD Type

Transistors

PNP Transistors

2SA1514K

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High Breakdown Voltage

● Lead Free/RoHS Compliant.

● Complementary to 2SC3906K

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

-120

-5

Unit

Collector - Base Voltage

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse (Note.1)

Collector Power Dissipation

Junction Temperature

-50

℃

-100

200

150

Storage Temperature range

Tstg

-55 to 150

Note.1: PW=100ms,Single Pulse

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-120

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -50 μA， I

Ic= -1 mA，I = 0

= -50μA， I =0

CB= -100 V , I =0

EB= -4V , I =0

E=0

CBO

EBO

-0.5

-1.2

560

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-10 mA, I

=-1 mA

=-10 mA, I

CE= -6V, I

C= -2mA

180

Collector output capacitance

Transition frequency

CB= -12V, I

CE= -12V, I

= 0,f=1MHz

= 2mA,f=100MHz

3.2

140

MHz

■ Classification of hfe

Type

Range

Marking

2SA1514K-R

180-390

2SA1514K-S

270-560

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