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2SA1514KT146S PDF预览

2SA1514KT146S

更新时间: 2024-11-19 23:19:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
1页 60K
描述
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | SOT-346

2SA1514KT146S 数据手册

  
2SA1579 / 2SA1514K / 2SA1038S  
Transistors  
High-voltage Amplifier Transistor  
(120V, 50mA)  
2SA1579 / 2SA1514K / 2SA1038S  
!External dimensions (Units : mm)  
!Features  
1) High breakdown voltage. (BVCEO = 120V)  
2) Complements the 2SC4102 / 2SC3906K / 2SC2389S.  
2SA1579  
1.25  
2.1  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
120  
120  
5  
Unit  
V
VCBO  
VCEO  
VEBO  
V
0.1Min.  
Each lead has same dimensions  
V
I
C
50  
mA  
ROHM : UMT3  
EIAJ : SC-70  
JEDEC : SOT-323  
(1) Emitter  
(2) Base  
(3) Collector  
2SA1579 / 2SA1514K  
0.2  
Collector power  
dissipation  
P
C
W
2SA1038S  
0.3  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55~+150  
2SA1514K  
!Packaging specifications and hFE  
Type  
2SA1579  
UMT3  
RS  
2SA1514K  
SMT3  
2SA1038S  
1.6  
Package  
SPT  
RS  
hFE  
RS  
2.8  
Marking  
Code  
R
R∗  
T106  
3000  
T146  
TP  
Basic ordering unit (pieces)  
Denotes hFE  
3000  
5000  
0.3Min.  
Each lead has same dimensions  
ROHM : SMT3  
EIAJ : SC-59  
(1) Emitter  
(2) Base  
JEDEC : SOT-346  
(3) Collector  
2SA1038S  
4
2
0.45  
0.45  
2.5 0.5  
5
2
Taping specifications  
( )  
1
(
)
( )  
3
ROHM : SPT  
EIAJ : SC-72  
(1) Emitter  
(2) Collector  
(3) Base  
!Electrical characteristics (Ta=25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
BVCBO  
BVCEO  
BVEBO  
Min.  
120  
120  
5  
180  
Typ.  
140  
3.2  
Max.  
Unit  
V
Conditions  
I
I
I
C
=−50µA  
=−1mA  
V
C
V
E
=−50µA  
CB=−100V  
EB=−4V  
I
CBO  
EBO  
CE(sat)  
FE  
0.5  
0.5  
0.5  
560  
µA  
µA  
V
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current transfer ratio  
V
I
C/I  
B
=−10mA/1mA  
=−2mA  
h
MHz  
pF  
V
V
V
CE=−6V, IC  
CE=−12V, I  
CB=−12V, I  
Transition frequency  
f
T
E
=2mA, f=30MHz  
=0A, f=1MHz  
Output capacitance  
Cob  
E

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